Resistivity of Graphene Nanoribbon Interconnects

Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line ‎Model

Time domain analysis of multilayer graphene nanoribbon (MLGNR) interconnects, based on ‎transmission line modeling (TLM) using a six-order linear parametric expression, has been ‎presented for the first time. We have studied the effects of interconnect geometry along with ‎its contact resistance on its step response and Nyquist stability. It is shown that by increasing ‎interconnects dimensions...

Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model

Time domain analysis of multilayer graphene nanoribbon (MLGNR) interconnects, based on transmission line modeling (TLM) using a six-order linear parametric expression, has been presented for the first time. We have studied the effects of interconnect geometry along with its contact resistance on its step response and Nyquist stability. It is shown that by increasing interconnects dimensions the...

Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition.

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2)·V(-1)·s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role...

Graphene nanoribbon heterojunctions and heterostructures

A graphene nanoribbon memory cell.

S D C1 C2 Over the past few years there has been a surge of interest in graphene, a recently isolated [ 1 ] one-atom-thick layer of carbon atoms arranged in a honeycomb lattice. From the application point of view this interest has mainly been driven by the high carrier mobility of graphene [ 2–4 ] which enables fabrication of fi eld-effect transistors (FETs) with much smaller channel resistance...